vishay semiconductors tlpg/h/p/r/y5600 document number 83043 rev. 1.9, 13-sep-07 www.vishay.com 1 sideview led, 5 mm tinted diffused product group and package data ? product group: led ? package: side view ? product series: standard ? angle of half intensity: 80 features ? even luminance of the emitting surface ? wide viewing angle ? yellow and green color categorized ? for dc and pulse operation ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? indicating and illumination purposes 19227 e4 parts table part color, luminous intensity technology tlpr5600 red, i v > 1 mcd gaasp on gap tlph5600 red, i v > 0.63 mcd gaasp on gap tlpy5600 ye l l o w, i v > 0.63 mcd gaasp on gap TLPG5600 green, i v > 0.63 mcd gap on gap tlpp5600 pure green, i v > 0.63 mcd gap on gap absolute maximum ratings 1) tlpr5600, tlph5600 , tlpy5600 , TLPG5600 , tlpp5600 parameter test condition part symbol value unit reverse voltage v r 6v dc forward current tlpr5600 i f 20 ma tlph5600 i f 30 ma tlpy5600 i f 30 ma TLPG5600 i f 30 ma tlpp5600 i f 30 ma surge forward current t p 10 si fsm 1a power dissipation t amb 60 c tlpr5600 p v 60 mw tlph5600 p v 100 mw tlpy5600 p v 100 mw TLPG5600 p v 100 mw tlpp5600 p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c
www.vishay.com 2 document number 83043 rev. 1.9, 13-sep-07 vishay semiconductors tlpg/h/p/r/y5600 note: 1) t amb = 25 c, unless otherwise specified note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 thermal resistance junction/ ambient tlpr5600 r thja 500 k tlph5600 r thja 400 k/w tlpy5600 r thja 400 k/w TLPG5600 r thja 400 k/w tlpp5600 r thja 400 k/w absolute maximum ratings 1) tlpr5600, tlph5600 , tlpy5600 , TLPG5600 , tlpp5600 parameter test condition part symbol value unit optical and electrical characteristics 1) tlpr5600, red parameter test condition symbol min typ. max unit luminous intensity 2) i f = 10 ma i v 12.5 mcd dominant wavelength i f = 10 ma d 630 nm peak wavelength i f = 10 ma p 640 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf optical and electrical characteristics 1) tlph5600, red parameter test condition symbol min typ. max unit luminous intensity 2) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 23v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf optical and electrical characteristics 1) tlpy5600, yellow parameter test condition symbol min typ. max unit luminous intensity 2) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
document number 83043 rev. 1.9, 13-sep-07 www.vishay.com 3 vishay semiconductors tlpg/h/p/r/y5600 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmin /i vmax 0.5 typical characteristics t amb = 25 c, unless otherwise specified optical and electrical characteristics 1) TLPG5600, green parameter test condition symbol min typ. max unit luminous intensity 2) i f = 10 ma i v 0.63 1.5 mcd dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf optical and electrical characteristics 1) tlpp5600, pure green parameter test condition symbol min typ. max unit luminous intensity 2) i f = 10 ma i v 0.63 1.6 mcd dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma ? 80 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 50 pf figure 1. power dissipation vs. ambient temperature 0 20 40 60 80 100 0 20406080100 t amb - ambient temperature (c) 17520 p v - power dissipation (mw) red, yello w , green, p u re green red figure 2. forward current vs. ambient temperature 0 5 10 15 20 25 30 35 40 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 17519 i f - for w ard c u rrent (ma) red, yello w , green, p u re green red
www.vishay.com 4 document number 83043 rev. 1.9, 13-sep-07 vishay semiconductors tlpg/h/p/r/y5600 figure 3. forward current vs. pulse length figure 4. rel. luminous intens ity vs. angular displacement figure 5. forward current vs. forward voltage 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t am b 65 c 0.01 0.1 1 10 1 10 100 1000 10000 t p - p u lse length (ms) 100 95 10047 i - for w ard c u rrent (ma) f 0.4 0.2 0 0.2 0.4 0.6 95 1007 8 0.6 0.9 0.8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0.1 1 10 100 0 v f - for w ard v oltage ( v ) 16634 f i - for w ard c u rrent (ma) s u per red 5 4 3 2 1 figure 6. rel. luminous intens ity vs. ambient temperature figure 7. relative luminous intensity vs. forward current figure 8. relative intensity vs. wavelength red 0 0.4 0. 8 1.2 1.6 95 10074 i - relati v el u mino u s intensity v rel i f =10ma t am b -am b ient temperat u re (c) 20 40 60 8 0 0 100 red i f - for w ard c u rrent (ma) 100 0.01 0.1 1 10 95 10076 i - relati v el u mino u s intensity v rel 10 1 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 550 590 630 670 710 750 17521 - w a v elength (nm) red i - relati v e intensity rel
document number 83043 rev. 1.9, 13-sep-07 www.vishay.com 5 vishay semiconductors tlpg/h/p/r/y5600 figure 9. forward current vs. forward voltage figure 10. rel. luminous intens ity vs. ambient temperature figure 11. rel. lumin. intensity vs. forw. current/duty cycle red t p /t = 0.001 t p =10s 0.1 1 10 100 1000 95 10026 v f - for w ard v oltage ( v ) i - for w ard c u rrent (ma) f 10 8 6 4 2 0 0 0 0.4 0. 8 1.2 1.6 95 10027 20 40 60 8 0 100 i - relati v e l u mino u s intensity v rel t am b - am b ient temperat u re (c) i f = 10 ma red 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 i v rel - relati v e l u mino u s intensity red figure 12. relative luminous intensity vs. forward current figure 13. relative intensity vs. wavelength figure 14. forward current vs. forward voltage 0.01 0.1 1 10 i f - for w ard c u rrent (ma) 100 10 95 10029 i - relati v e l u mino u s intensity v rel red 1 590 610 630 650 670 0 0.2 0.4 0.6 0. 8 1.2 690 95 10040 - w a v elength (nm) 1.0 red i - relati v e l u mino u s intensity v r el 0.1 1 10 100 1000 10 8 6 4 2 0 95 10030 v f - for w ard v oltage ( v ) i- for w ard c u rrent (ma) f yello w t p /t = 0.001 t p =10 s
www.vishay.com 6 document number 83043 rev. 1.9, 13-sep-07 vishay semiconductors tlpg/h/p/r/y5600 figure 15. rel. luminous intensity vs. ambient temperature figure 16. rel. lumin. intensity vs. forw. current/duty cycle figure 17. relative luminous intensity vs. forward current 0 0 0.4 0. 8 1.2 1.6 95 10031 20 40 60 8 0 100 i - relati v e l u mino u s intensity v rel t am b - am b ient temperat u re (c) yello w i f = 10 ma yello w 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10260 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relati v e l u mino u s intensity v rel 2.0 yello w i f - for w ard c u rrent (ma) 100 0.1 1 10 95 10033 i - relati v e l u mino u s intensity v rel 10 1 0.01 figure 18. relative intensity vs. wavelength figure 19. forward current vs. forward voltage figure 20. rel. luminous intens ity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0. 8 1.2 650 95 10039 - w a v elength (nm) 1.0 yello w i v rel - relati v e l u mino u s intensity 0.1 1 10 100 1000 10 8 6 4 2 0 95 10034 v f - for w ard v oltage ( v ) i - for w ard c u rrent (ma) f green t p /t = 0.001 t p =10 s 0 0.4 0. 8 1.2 1.6 95 10035 i - relati v e l u mino u s intensity v rel green i f = 10 ma t am b - am b ient temperat u re (c) 20 40 60 8 0 0 100
document number 83043 rev. 1.9, 13-sep-07 www.vishay.com 7 vishay semiconductors tlpg/h/p/r/y5600 figure 21. specific luminous intensity vs. forward current figure 22. relative luminous intensity vs. forward current figure 23. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0. 8 1.2 1.6 2.4 95 10263 500 v rel 2.0 green i - specific l u mino u s intensity i f (ma) 0.5 0.2 0.1 0.05 0.02 1 t p /t i f - for w ard c u rrent (ma) 100 green 0.1 1 10 95 10037 i - relati v e l u mino u s intensity v rel 10 1 520 540 560 5 8 0 600 0 0.2 0.4 0.6 0. 8 1.2 620 95 1003 8 - w a v elength (nm) 1.0 green i - relati v e l u mino u s intensity v rel figure 24. forward current vs. forward voltage figure 25. rel. luminous intensity vs. ambient temperature figure 26. specific luminous intensity vs. forward current 02 0.1 1 10 100 5 95 99 88 p u re green f i - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 13 4 0 0.4 0. 8 1.2 1.6 2.0 95 9991 p u re green i - relati v e l u mino u s intensity v rel t am b - am b ient temperat u re (c) 0 100 8 0 60 40 20 95 10261 10 1000 100 0 0.4 0. 8 1.2 1.6 2.4 2.0 p u re green i - specific l u mino u s fl u x spec i f - for w ard c u rrent (ma)
www.vishay.com 8 document number 83043 rev. 1.9, 13-sep-07 vishay semiconductors tlpg/h/p/r/y5600 package dimensions in millimeters figure 27. relative luminous intensity vs. forward current 0.01 0.1 1 10 100 10 1 95 999 8 p u re green i - relati v e l u mino u s intensity v rel i f - for w ard c u rrent (ma) figure 28. relative intensity vs. wavelength 500 520 540 560 5 8 0 0 0.2 0.4 0.6 0. 8 1.2 600 95 10325 1.0 p u re green - w a v elength (nm) i - relati v e l u mino u s intensity v rel 95 11321
document number 83043 rev. 1.9, 13-sep-07 www.vishay.com 9 vishay semiconductors tlpg/h/p/r/y5600 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can cert ify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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